Abstract
In this paper, we present a nanoscale morphological and structural characterization of few layers of graphene grown by thermal decomposition of off-axis 4H-SiC (0001) and by C segregation on Ni thin films from a solid carbon source. Transmission electron microscopy in different configurations, i.e. cross-section and plan view, was used to get information on the number of graphene layers as well as on the rotational order between the layers and with respect to the substrate. Atomic force microscopy was used to study the changes in the surface morphology produced by thermal annealing. In particular, the density and the height of peculiar corrugations (wrinkles) in the few layers of graphene, formed during the cool down in the thermal process, were investigated.
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Acknowledgements
The authors thank C. Vecchio and N. Piluso from CNR-IMM for the assistance in sample preparation and for Raman analyses, respectively. F. Roccaforte from CNR-IMM is acknowledged for useful discussions. Epitaxial Technology Center (ETC) provided SiC substrates for EG experiments. M. Rambach and W. Lerch from Centrotherm thermal solutions GmbH + Co. KG, Blaubeuren, Germany, are acknowledged for the collaboration in the experiments on epitaxial graphene growth on SiC. This publication has been supported, in part, by the European Science Foundation (ESF) under the EUROCORE program EuroGRAPHENE, within GRAPHIC-RF coordinated project.
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Giannazzo, F., Bongiorno, C., di Franco, S., Nigro, R.L., Rimini, E., Raineri, V. (2012). Morphological and Structural Characterization of Graphene Grown by Thermal Decomposition of 4H-SiC (0001) and by C Segregation on Ni. In: Ottaviano, L., Morandi, V. (eds) GraphITA 2011. Carbon Nanostructures. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-20644-3_12
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DOI: https://doi.org/10.1007/978-3-642-20644-3_12
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