Abstract
The paper introduces the η=WI/Xm=0.25 mathematical models and adopts mathematical model VB=94ρ n 0.7 to design structure parameters of high power double-base P + PINN + structured fast soft recovery diodes. Platinum doping and electron irradiating technologies are used to mutually control the base minority carrier lifetime and distrbution, the design method is used to optimize the structure parameter of ZKR300A/ 2500V. The design parameters were tested and verified through experiments, which proved the parameters of diodes meet the designed target and achieved the level of similar products in abroad countries. The results prove that the design method and the selected parameters are correct,lifetime control is effective.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Zhang, H., Zhang, B.: The current development of fast soft-recovery diode. World Electronic Device 4, 29–33 (2001)
Zhang, Q., Zhang, B., Wang, X.: New high-power fast soft recovery diode. Semiconductor Technology 23(1), 30–34 (1998)
Zhang, H., Zhang, B.: Overview of high-power fast soft recovery diode. Semiconductor Information 38(3), 1–8 (2001)
Faur, M., Maria, F., Chandra, G., et al.: Defect density reduction of n + p and p + n Inp structures fabricated by closed ampoule thermal diffusion. In: Indium Phosphate and Related Materials Fourth International Conference, pp. 322–325 (1992)
Jia, Y., Wang, J., Kang, B.: High-voltage Power Diode with Lifetime Control of Localized Platinum. Progress in Solid State Electronics 24(4), 422–426 (2004)
Nielsen, P., Blaabjerg, F., Pedersen, J.K.: Space Vector Modulated Matrix Converter with Minimized Number of Switching’s and A Feed forward Compensation of Input Voltage Unbalance. In: Proc. of PEDES 1996, vol. (2), pp. 833–839 (1996)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2011 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
An, T., Li, Y., Yin, Q. (2011). Research on Double-Base Regions High-Power Fast Recovery Diode. In: Lee, J. (eds) Advanced Electrical and Electronics Engineering. Lecture Notes in Electrical Engineering, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19712-3_6
Download citation
DOI: https://doi.org/10.1007/978-3-642-19712-3_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-19711-6
Online ISBN: 978-3-642-19712-3
eBook Packages: EngineeringEngineering (R0)