Abstract
The fast and soft recovery is required for power pin diodes supporting the use of IGBT. In this paper, the effects of the local low lifetime and the overall lifetime on device characteristics have been simulated and analyzed by using of software. Based on their effects on the reverse recovery time trr, the forward voltage drop VF and the reverse leakage current IR of power pin diode, those parameters, such as the base location L, lifetime \(\tau^{*}_{\rm P}\) and allover lifetime τ P In local low lifetime control technology and the overall lifetime τ P, are studied and the optimal base lifetime distribution parameters are obtained. Those results have practical reference value for research and manufacturing of diodes with fast and soft recovery.
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© 2011 Springer-Verlag Berlin Heidelberg
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An, T., Xing, Y., Wang, C. (2011). Optimization Design of Lifetime Distribution in Power Diode with Fast and Soft Recovery. In: Lee, J. (eds) Advanced Electrical and Electronics Engineering. Lecture Notes in Electrical Engineering, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19712-3_5
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DOI: https://doi.org/10.1007/978-3-642-19712-3_5
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-19711-6
Online ISBN: 978-3-642-19712-3
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