Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation

Abstract

To overcome some of the problems in SiC crystal growth, modeling can now be considered as a reliable engineering tool in research, development and production of electronic materials. There is a multitude of physical phenomena in the sublimation growth process. Only a partial modeling of the whole process can be made even by the most ambitious researcher. The main objective is to reach an accurate understanding of heat and mass transfer. It could lead to “better” material or more “efficient” production processes. The purpose of modeling should not be the model itself, but to provide tools for the development of the process. In this sense, if it is easy to reach a consensus on the meaning of better and efficient in the fabrication of materials, the role of process modeling in achieving these goals, in contributing to them is not easily identifiable (S. Motakef, Cape Simulation Inc., http://www.capesim.com). In the sublimation process, there is no direct way to control the behavior of individual species and therefore the growth process can be influenced through macroscopic parameters, such as thermal environment, mass transport and chemical composition and reactivity. Firstly, modeling gives an insight on what is actually happening in the system. Secondly, it helps in evaluating new systems without the need of building them.