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Ohmic Contacts for Power Devices on SiC

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Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

An ohmic contact in semiconductor devices consists of an electrode (metal) and a semiconductor, and it plays an important role in current injection and ejection. Because a voltage drop at the contact increases the power loss and deteriorates the device performance, the contact resistance must be negligible relative to the total resistance of the device (its on-resistance) [1]. Contacts through which a high-density current flows horizontally must have the lowest resistivity possible because their effective contact area is very small due to current crowding at the contact edges [2]. Source contacts in vertical DMOSFETs are one example of such contacts. Increasing the size of the contact area to make it larger than that of the effective area does not reduce contact resistance. The only way to minimize contact resistance is to reduce the specific contact resistivity, ρC, itself. High-power and high-frequency SiC devices need horizontal contacts with a ρC in the range of 10−6 Ωcm2 or lower [3].

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Author information

Authors and Affiliations

  1. Electronics and Information Technology Research Laboratory, Nissan Research Center, Nissan Motor Co., Ltd., 1, Natsushima-cho, Yokosuka, Kanagawa, 237-8523, Japan

    S. Tanimoto

  2. Ultra-Low-Loss Power Device Technology Research Body (UPR), Japan

    S. Tanimoto, H. Okushi & K. Arai

  3. Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan

    H. Okushi

  4. Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan

    K. Arai

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  1. S. Tanimoto
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  2. H. Okushi
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  3. K. Arai
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Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Tanimoto, S., Okushi, H., Arai, K. (2004). Ohmic Contacts for Power Devices on SiC. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_27

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  • DOI: https://doi.org/10.1007/978-3-642-18870-1_27

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