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Contributions to the Density of Interface States in SiC MOS Structures

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Book cover Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

Development of metal-oxide-semiconductor (MOS) technology for silicon carbide has attracted great attention because of the unique physical, chemical and, in particular, electronic properties of various crystallographic modifications (polytypes) of SiC, promising substantial advantages as compared to the conventional Si-based MOS devices [1]–[6]. The most important features of SiC are the wide band gap (from 2.38 eV for 3C-SiC to 3.26 eV for 4H-SiC, [7]), the high critical electric field, the high saturation electron velocity, and the high thermal conductivity [1, 2]. These properties potentially allow operation of SiC devices under conditions at which silicon electronics fails, thus extending the application area of semiconductor devices to higher voltages, higher power levels, higher temperatures, and higher frequencies. As compared to other wide-band gap semiconductors, SiC additionally has a significant advantage related to the possibility to grow insulating SiO2 overlayers by simple thermal oxidation, naturally leading to the MOS device configuration. Albeit fabricated in recent years by many groups, SiC MOS field-effect transistors have yet not met the expectations. Their failure is largely related to the greatly enhanced density of imperfections at the SiO2/SiC interface [8, 9], which not only degrade the device performance but also cause reliability problems related to the anticipated extreme operating conditions [10].

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Authors and Affiliations

  1. Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001, Leuven, Belgium

    V. V. Afanas’ev & A. Stesmans

  2. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7 / A3, 91058, Erlangen, Germany

    F. Ciobanu & G. Pensl

Authors
  1. V. V. Afanas’ev
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  2. F. Ciobanu
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  3. G. Pensl
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  4. A. Stesmans
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Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Afanas’ev, V.V., Ciobanu, F., Pensl, G., Stesmans, A. (2004). Contributions to the Density of Interface States in SiC MOS Structures. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_14

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