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Formation of SiC Thin Films by Ion Beam Synthesis

  • Chapter
Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

Ion beam synthesis (IBS) is a promising technique for forming homogeneous, stoichiometric, large-area thin films of epitaxial 3C-SiC within or on a silicon wafer. Although well-known in silicon device technology as a technique to form buried SiO2 or metal silicide layers, the IBS technique has only recently attracted larger interest as a means of creating buried or near-surface SiC films. In this chapter the major recent achievements will be reviewed, our present understanding of the temperature and dose dependence of the mechanisms involved in the IBS of SiC will be summarized, the characteristics of IBS formed layers will be described and first applications of such SiC layers will be compiled. As the IBS technique has not been described in the preceding Silicon Carbide volumes [1], the review will start with a brief description of the basics of the IBS technique and a short chronological summary of early observations. The presentation will be limited to the use of directed ion beams with energies of some keV to few MeV and will not include beam assisted deposition techniques.

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  1. Institute of Physics, University of Augsburg, 86135, Augsburg, Germany

    J. K. N. Lindner

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  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Lindner, J.K.N. (2004). Formation of SiC Thin Films by Ion Beam Synthesis. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_11

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