Abstract
Energy-sensitive detectors perform asynchronous arrival detection of single X-Ray photons and particles. Their ability of measuring the detected particles’ energy improves the performance of the particle counting applications and enables spectroscopic applications. In such detectors, either a semiconductor layer for direct conversion or a combination of a scintillator and a semiconductor sensing device for visible photons is used for generation of an electrical charge pulse per absorbed particle. This charge amount, which represents the particle energy, is detected by an asynchronous charge pulse detecting circuit. The noise of such circuits defines the lowest discrimination threshold of counting systems and the energy resolution of spectroscopic applications. Therefore, low noise, low power consumption, and low area are requirements for charge pulse detecting circuits used in segmented energy sensitive particle detectors with a high number of pixels. Choice of a sensing device, definition of the charge pulse detecting circuit’s topology, and analysis of interdependences amongst the above performance parameters are covered and a context with employed readout schemes, processing circuits, and target applications is established in this chapter. Energy-sensitive detectors perform asynchronous arrival detection of single X-Ray photons and particles. Their ability of measuring the detected particles’ energy improves the performance of the particle counting applications and enables spectroscopic applications. In such detectors, either a semiconductor layer for direct conversion or a combination of a scintillator and a semiconductor sensing device for visible photons is used for generation of an electrical charge pulse per absorbed particle. This charge amount, which represents the particle energy, is detected by an asynchronous charge pulse detecting circuit. The noise of such circuits defines the lowest discrimination threshold of counting systems and the energy resolution of spectroscopic applications. Therefore, low noise, low power consumption, and low area are requirements for charge pulse detecting circuits used in segmented energy sensitive particle detectors with a high number of pixels. Choice of a sensing device, definition of the charge pulse detecting circuit’s topology, and analysis of interdependences amongst the above performance parameters are covered and a context with employed readout schemes, processing circuits and target applications is established in this chapter.
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Notes
- 1.
The term “pile-up” denotes accumulation of signal information of consecutive particle detections.
- 2.
Note that, the top electrode of MOS devices is made from polycrystalline silicon in most manufacturing processes.
- 3.
Buried photodiodes are also referred to as pinned photodiodes.
- 4.
Amplifier noise is also referred to as series noise in literature.
- 5.
Feedback resistor noise and sensing device leakage current shot noise are also referred to as parallel noise in literature.
- 6.
Poisson noise is also referred to as shot noise.
- 7.
In literature the DC shift of the output signal is also referred to as baseline shift.
- 8.
n is also referred to as the shaper order.
- 9.
A ballistic deficit may even be observed on the CSA output if the spacing between the nondominant and dominant poles is poor or if the response time of the sensing device is longer than the reset time constant.
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Lotto, C. (2011). Energy-Sensitive Single-Photon X-ray and Particle Imaging. In: Seitz, P., Theuwissen, A. (eds) Single-Photon Imaging. Springer Series in Optical Sciences, vol 160. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18443-7_11
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