Abstract
In this chapter we discuss various specific solutions of the heat equation for semi-infinite substrates. The irradiation geometry and the definition of the coordinate system shall be the same as in Fig. 6.1.1 but with \(\ensuremath{h_{\mathrm{s}}}\to\infty\). Any phase changes and chemical reaction energies are ignored. For many applications, the knowledge of the maximum laser-induced temperature rise is of great importance. With the beam shapes discussed in Sect. 6.4, the maximum surface temperature always occurs in the center of the laser beam at \(\textbf{\textit{x}}^\ast=0\). Subsequently, we present analytic expressions for semi-infinite substrates, stationary conditions, and temperature-independent material parameters.
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References
Allmen M. von, A. Blatter: Laser-Beam Interactions with Materials, 2nd ed., Springer Ser. Mater. Sci. Vol. 2 (Springer, Berlin, Heidelberg 1995)
Ashcroft N.W., N.D. Mermin: Solid State Physics (Holt-Saunders, New York 1976)
Bhattacharyya A., B.G. Streetman: Theoretical considerations regarding pulsed CO2 laser annealing of silicon, Solid. State. Commun. 36, 671 (1980)
Chaoui N., J. Siegel, J. Solis, C.N. Afonso: Reflectivity of crystalline Ge and Si at the melting temperature measured in real time with sub-ns temporal resolution, J. Appl. Phys. 89, 3763 (2001)
Ho C.Y., R.W. Powell, P.E. Liley: Thermal conductivity of the elements: A comprehensive review, J. Phys. Chem. Ref. Data. 3, Suppl. 1, 588 (1974)
Jellison G.E., F.A. Modine: Optical functions of Silicon between 1.7 and 4.7 eV at elevated temperatures, Phys. Rev. B 27, 7466 (1983)
Kwong D.L., D.M. Kim: Pulsed laser heating of Silicon: The coupling of optical absorption and thermal conduction during irradiation, J. Appl. Phys. 54, 366 (1983)
Svantesson K.G., N.G. Nilsson: Determination of the absorption and the Free carrier distribution in Silicon at high level photogeneration at 1.06 mm and 294 K, Phys. Scr. 18, 405 (1978)
Toulemonde M., S. Unamuno, R. Heddache, M.O. Lampert, M. Hage-Ali, P. Siffert: Time-resolved reflectivity and Melting depth measurements using pulsed ruby laser on Silicon, Appl. Phys. A 36, 31 (1985)
Ziman J.M.: Principles of the Theory of Solids (Cambridge University Press, London 1972)
Luk’yanchuk B., D. Bäuerle: 1994, unpublished
Piglmayer K., D. Bäuerle: 1994, unpublished
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Bäuerle, D. (2011). Semi-infinite Substrates. In: Laser Processing and Chemistry. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-17613-5_7
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DOI: https://doi.org/10.1007/978-3-642-17613-5_7
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