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Nanophenomena at Surfaces pp 239–258Cite as

Step Bunching on Silicon Surface Under Electromigration

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Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 47))

Abstract

In situ ultra high vacuum reflection electron microscopy studies of structural and morphological transformations of silicon surface at condition of sample heating by direct electric current are reviewed. The kinetic instability of the diffusion-linked atomic steps affected by electromigration of adsorbed atoms on atomically clean and gold-deposited silicon (111) surface is studied in temperature range between 850 and 1350°C. Consequent changes of the silicon surface morphology during thermal annealing and gold adsorption were observed as reversible redistribution of regular atomic steps to step bunches and vice versa. Peculiarities of the atomic mechanism of the such morphological transitions observed on atomically clean and gold-deposited silicon surface at enhanced temperatures are discussed.

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References

  1. I. Stranski, R. Kaishev, On crystal growth theory, Physics-Uspekhi (Russia), 1936, pp. 407–465.

    Google Scholar 

  2. R. Kaishev, I.N. Stranskii, Zur kinetischen Beschreibung der Keimbildungsgeschwindig-keit. Z. Phys. Chem. Abt. A 166, 317 (1934)

    Google Scholar 

  3. O.P. Pchelyakov, A.I. Toropov, V.P. Popov, A.V. Latyshev, L.V. Litvin, Yu.V. Nastaushev, A.L. Aseev, Nanotechnologies in semiconductor electronics. Seventh international symposium on laser metrology applied to science, industry, and everyday life, in Proceedings of SPIE, vol. 4900, 2002, ed. by Yuri V. Chugui, Sergei N. Bagaev, A. Weckenmannn, P. Herbert Osanna, pp. 247–256

    Google Scholar 

  4. K. Yagi, Surface imaging using UHV-CTEM. Journal of Electron Microscopy 44, 269 (1995)

    CAS  Google Scholar 

  5. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, Direct UHV REM observation of the behaviour of monatomic steps on the silicon (111) surface. Phys. Stat. Solid. (a)146, 251 (1994)

    Article  CAS  Google Scholar 

  6. H.-C. Jeong, E.D. Williams, Steps on surfaces experiment and theory. Surf. Sci. Rep. 34, 171 (1999)

    Article  CAS  Google Scholar 

  7. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, L.V. Sokolov, S.I. Stenin, Reflection electron microscopy study of clean Si(111) surface reconstruction during the \((7\times 7)-(1\times 1)\) phase transition. Surf. Sci. 254, 90 (1991)

    Article  CAS  Google Scholar 

  8. A.B. Krasilnikov, A.V. Latyshev, A.L. Aseev, S.I. Stenin, Monoatomic step clustering during superstructural transitions on Si(111) surface. J. Crystal Growth 116, 178 (1992)

    Article  CAS  Google Scholar 

  9. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, In situ reflection electron microscope observation of two-dimensional nucleation on Si(111) during epitaxial growth. Ultramicroscopy, 48, 377 (1993)

    Article  CAS  Google Scholar 

  10. H. Minoda, Periodic step density wave on Si(111) vicinal surfaces studied by reflection electron microscopy. Phys. Rev. B 64, 233305 (2001)

    Article  Google Scholar 

  11. A.B. Krasilnikov, A.V. Latyshev, A.L. Aseev, Transformation of a Si(111) stepped surface during the formation of a Si(\(3\times 1\)) Ca superstructure. Surf. Sci. 290, 232 (1993)

    Article  CAS  Google Scholar 

  12. Y. Takahashi, H. Minoda, Y. Tanishiro, K. Yagi, Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy. Surf. Sci. 433–435, 512 (1999)

    Article  Google Scholar 

  13. H. Minoda, Y. Takahashi, Y. Tanishiro, K. Yagi, In situ reflection electron microscopy study of Cu-induced step bunching on Si(111) vicinal surfaces. Surf. Sci. 438, 68 (1999)

    Article  CAS  Google Scholar 

  14. B.S. Swartzentruber, Y.-W. Mo, M.B. Webb, M.G. Lagally, Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces. J. Vac. Sci. Technol. A 7, 2901 (1989)

    Article  CAS  Google Scholar 

  15. A.V. Latyshev, A.L. Aseev, A.B. Krasilnikov, S.I. Stenin, Transformations on clean Si(111) stepped surface during sublimation. Surf. Sci. 213, 157 (1989)

    Article  CAS  Google Scholar 

  16. L.V. Litvin, A.B. Krasilnikov, A.V. Latyshev, Transformations of the stepped Si(001) surface structure induced by heating the specimen by a current. Surf. Sci. Lett. 244, L121 (1991)

    Article  CAS  Google Scholar 

  17. E.D. Williams, E. Fu, Y.-N. Yang, D. Kandel, J.D. Weeks, Measurement of the anisotropy ratio during current-induced step bunching. Surf. Sci. 336, L746 (1995)

    Article  CAS  Google Scholar 

  18. Y.-N. Yang, E. Fu, E.D. Williams, An STM study of current-induced step bunching on Si (111). Surf. Sci. 356, 101 (1996)

    Article  CAS  Google Scholar 

  19. Y. Homma, M. Suzuki, Step bunching structure on vicinal Si(111) surfaces studied by scanning force microscopy. Appl. Surf. Sci. 60/61, 479 (1992)

    Article  Google Scholar 

  20. H. Tokumoto, K. Miki, H. Murakami, K. Kajimura, Heating current induced step motion on Si(111) surface by scanning tunneling microscopy. J. Vac. Sci. Technol. B 9, 699 (1991)

    Article  CAS  Google Scholar 

  21. B. Ranguelov, S. Stoyanov, Instabilities at vicinal crystal surfaces: competition between electromigration of adatoms and kinetic memory effect. Phys. Rev. B 77, 205406 (2008)

    Article  Google Scholar 

  22. B. Ranguelov, S. Stoyanov, Evaporation and growth of crystals: propagation of step-density compression waves at vicinal surfaces. Phys. Rev. B 76, 035443 (2007)

    Article  Google Scholar 

  23. J. Krug, V. Tonchev, S. Stoyanov, A. Pimpinelli, Scaling properties of step bunches induced by sublimation and related mechanisms. Phys. Rev. B 71, 045412 (2005)

    Article  Google Scholar 

  24. M. Sato, M. Uwaha, Growth of step bunches formed by the drift of adatoms. Surf. Sci. 442, 318 (1999)

    Article  CAS  Google Scholar 

  25. A. Natori, Step structure transformation induced by DC on vicinal Si(111). Jpn. J. Appl. Phys. 33, 3538 (1994)

    Article  CAS  Google Scholar 

  26. D. Kandel, J.D. Weeks, Step motion, patterns, and kinetic instabilities on crystal surfaces. Phys. Rev. Lett. 72, 1678 (1994)

    Article  CAS  Google Scholar 

  27. J.J. Metois, M. Audiffren, An experimental study of step dynamics under the influence of electromigration: Si(111). Int. J. Mod. Phys. B 11, 3691 (1997)

    Article  CAS  Google Scholar 

  28. A.V. Latyshev, H. Minoda, Y. Tanishiro, K. Yagi, Electromigration and gold-induced step bunching on the Si(111) surface. Surf. Sci. 401, 22 (1998)

    Article  CAS  Google Scholar 

  29. A.V. Latyshev, H. Minoda, Y. Tanishiro, K. Yagi, Adatom effective charge in morphology evolution on Si(111) surface. Appl. Surf. Sci. 130–132, 60 (1998)

    Article  Google Scholar 

  30. H. Minoda, Periodic step density wave on Si(111) vicinal surfaces studied by reflection electron microscopy. Phys. Rev. B 64, 23305 (2001)

    Article  Google Scholar 

  31. H. Minoda, Study of step instability on Si surfaces. Thin Solid Films 424, 40 (2003)

    Article  CAS  Google Scholar 

  32. H. Minoda, Direct current heating effects on Si(111) vicinal surfaces. J. Phys. Condens. Matter. 15, 3255 (2003)

    Article  Google Scholar 

  33. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions. Microsc. Res. Technique 20, 341 (1992)

    Article  CAS  Google Scholar 

  34. A.L. Aseev, A.V. Latyshev, A.B. Krasilnikov, Reflection electron microscopy observation of the behavior of monoatomic steps on the silicon surfaces. Surf. Rev. Lett. 4, 551 (1997)

    Article  CAS  Google Scholar 

  35. A.V. Latyshev, A.L. Aseev, A.B. Krasilnikov, S.I. Stenin, REM study of structural transformation on a clean silicon surface in sublimation, phase transition and homoepitaxy. Surf. Sci. 227, 24 (1990)

    Article  CAS  Google Scholar 

  36. A.L. Aseev, A.V. Latyshev, A.B. Krasilnikov, Direct observation of monoatomic step behaviour in MBE on Si by reflection electron microscopy. J. Crystal Growth 115, 393 (1991)

    Article  CAS  Google Scholar 

  37. C. Alfonso, J.C. Heyraud, J.J. Metois, About the sublimation of Si surfaces vicinal of 111. Surf. Sci. Lett. 291, L745 (1993)

    Article  CAS  Google Scholar 

  38. A.V. Latyshev, H. Minoda, Y. Tanishiro, K. Yagi, Dynamical step edge stiffness on the Si(111) surface. Phys. Rev. Lett. 76, 94 (1996)

    Article  CAS  Google Scholar 

  39. A.V. Latyshev, H. Minoda, Y. Tanishiro, K. Yagi, Ultra high vacuum reflection electron microscopy study of step-dislocation interaction on Si(111) surface. Jpn. J. Appl. Phys. 34, 5768 (1995)

    Article  CAS  Google Scholar 

  40. A.V. Latyshev, A.L. Aseev, Monatomic steps on Si(111) surface. Usp. Fiz. Nauk. 168, 1117 (1998)

    Article  CAS  Google Scholar 

  41. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric current. Surf. Sci. 311, 395 (1994)

    Article  CAS  Google Scholar 

  42. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, Self-diffusion on Si(111) surfaces. Phys. Rev. B 54, 2586 (1996)

    Article  CAS  Google Scholar 

  43. M. Iwatsuki, S. Kitamura, T. Sato, T. Sueyoshi, Observation of surface reconstruction and nano-fabrication on silicon under high temperature using a UHV-STM. Appl. Surf. Sci. 60/61, 580 (1992)

    Article  Google Scholar 

  44. Y.-N. Yang, E.D. Willams, High atom density in the \(1\times 1\) phase and origin of the metastable reconstructions on Si(111). Phys. Rev. Lett. 72, 1862 (1994)

    Article  CAS  Google Scholar 

  45. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, Anomalous behavior of the monatomic steps during (\(1\times 1)-(7\times 7\)) structural transition on atomically clean silicon surface. Pis‘ma Zh. Eksp. Teor. Fiz. 49, 448 (1988)

    Google Scholar 

  46. A.V. Latyshev, A.L. Aseev, A.B. Krasilnikov, A.V. Rzhanov, S.I. Stenin, Monatomic steps behavior on Si(111) surface during sublimation under electrical heating current conditions. Dokl. Akad. Nauk. USSR 300, 84 (1988)

    CAS  Google Scholar 

  47. S.S. Kosolobov, A.L. Aseev, A.V. Latyshev, A.V. Rzhanov, In situ study of interaction of oxygen with the si(111) surface by ultrahigh-vacuum reflection electron microscopy. Fiz. Tekh. Poluprovodn. 35, 1084 (2001)

    Google Scholar 

  48. A.L. Aseev, S.S. Kosolobov, A.V. Latyshev, S.A. Song, A.A. Saranin, A.V. Zotov, V.G. Lifshits, In situ REM and ex situ SPM studies of silicon (111) surface. Phys. Stat. Sol. (a), 202, 2344 (2005)

    Article  CAS  Google Scholar 

  49. E.E. Rodyakina, S.S. Kosolobov, D.V. Sheglov, D.A. Nasimov, S.A. Song, A.V. Latyshev, Atomic steps on sublimating Si(001) surface observed by atomic force microscopy. Phys. Low-Dim. Struct. 1–2, 9 (2004)

    Google Scholar 

  50. A.V. Latyshev, L.V. Litvin, A.L. Aseev, Adatom effective charge in morphology evolution on Si(111) surface. Appl. Surf. Sci. 130–132, 139 (1998)

    Article  Google Scholar 

  51. A.V. Latyshev, D.A. Nasimov, V.N. Savenko, S.S. Kosolobov, A.L. Aseev, In situ REM studies of a Si(111) stepped surface during gold adsorption and oxygen treatments. Inst. Phys. Conf. Ser. 169, 153 (2002)

    Google Scholar 

  52. A.V. Latyshev, A.B. Krasilnikov, A.L. Aseev, UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth. Thin Solid Films 306, 205 (1997)

    Article  CAS  Google Scholar 

  53. S.S. Kosolobov, A.V. Latyshev, S.A. Song, L.I. Fedina, A.K. Gutakovskij, Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures. Pis‘ma Zh. Eksp. Teor. Fiz. 81, 149 (2005)

    Google Scholar 

  54. S.S. Kosolobov, S.A. Song, E.E. Rodyakina, A.V. Latyshev, In situ study of interaction of oxygen with the Si(111) surface by ultrahigh-vacuum reflection electron microscopy. Fiz. Tekh. Poluprovodn. 41, 462 (2007)

    Google Scholar 

  55. D. Grozea, E. Bengu, L.D. Marks, Surface phase diagrams for the Ag–Ge(111) and Au–Si(111) systems. Surf. Sci. 461, 23 (2000)

    Article  CAS  Google Scholar 

  56. S. Ino, Surface studies by RHEED (Reflection High Energy Electron Diffraction) MSA. Bulletin 23, 109 (1993)

    Google Scholar 

  57. W. Swiech, E. Bauer, M. Mundschau, A low-energy electron microscopy study of the system Si(111)-Au. Surf. Sci. 253, 283 (1991)

    Article  CAS  Google Scholar 

  58. T. Kamino, T. Yaguchi, M. Tomita, H. Saka, In situ high resolution electron microscopy study on a surface reconstruction of Au-deposited Si at very high temperatures. Philos. Mag. A 75, 105 (1997)

    Article  CAS  Google Scholar 

  59. M. Sato, M. Uwaha, Y. Saito, Instabilities of steps induced by the drift of adatoms and effect of the step permeability. Phys. Rev. B 62, 8452 (2000)

    Article  CAS  Google Scholar 

  60. S. Stoyanov, New type of step bunching instability at vicinal surfaces in crystal evaporation affected by electromigration. Surf. Sci. 416, 200 (1998)

    Article  CAS  Google Scholar 

  61. S. Stoyanov, V. Tonchev, Properties and dynamic interaction of step density waves at a crystal surface during electromigration affected sublimation. Phys. Rev. B 58, 1590 (1998)

    Article  CAS  Google Scholar 

  62. N. Suga, J. Kimbara, N.-J. Wu, H. Yasunaga, A. Natori, Novel transition mechanism of surface electromigration induced step structure on vicinal Si(111) surfaces. Jpn. J. Appl. Phys. 39, 4412 (2000)

    Article  CAS  Google Scholar 

  63. A.V. Latyshev, D.A. Nasimov, V.N. Savenko, A.L. Aseev, UHV-REM study of gold adsorption on the Si(111) surface. Thin Solid Films 367, 142 (2000)

    Article  CAS  Google Scholar 

  64. D.A. Nasimov, D.V. Sheglov, E.E. Rodyakina, S.S. Kosolobov, L.I. Fedina, S.A. Teys, A.V. Latyshev, AFM and STM studies of quenched Si(111) surface. Phys. Low-Dim. Struct. 3–4, 157 (2003)

    Google Scholar 

  65. H. Minoda, Y. Tanishiro, N. Yamamoto, K. Yagi, Growth of Si on Au deposited Si(111) surfaces studied by UHV-REM. Appl. Surf. Sci. 60/61, 107 (1992)

    Article  Google Scholar 

  66. K. Aoki, H. Minoda, Y. Tanishiro, K. Yagi, REM studies of adsorption-induced phase transition and faceting in the Si(111)-Au system. Surf. Rev. Lett. 5, 653 (1998)

    Article  CAS  Google Scholar 

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Acknowledgments

We wish to acknowledge the valuable assistance in experiments and discussion to Prof. A.L. Aseev. This work has been partly supported by RFBR and by the programs of Ministry of Education and Science of Russian Federation.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk, 630090, Russia

    S.S. Kosolobov

  2. Novosibirsk State University, Novosibirsk, Russia

    A.V. Latyshev

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  1. S.S. Kosolobov
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  2. A.V. Latyshev
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Correspondence to S.S. Kosolobov .

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Editors and Affiliations

  1. Inst. Physical Chemistry, Bulgarian Academy of Sciences, Georgi Bonchev Street, Sofia, 1113, Bulgaria

    Michail Michailov

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Kosolobov, S., Latyshev, A. (2011). Step Bunching on Silicon Surface Under Electromigration. In: Michailov, M. (eds) Nanophenomena at Surfaces. Springer Series in Surface Sciences, vol 47. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-16510-8_11

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