Abstract
The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are necessary for understanding the analyses that will follow subsequently, are described in Sect. 2 and 3, respectively. Then, the background study of the actual (non-ideal) MOS structure by taking into consideration oxide charges and work function difference is presented in Sect. 4.
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Bentarzi, H. (2011). The MOS Structure. In: Transport in Metal-Oxide-Semiconductor Structures. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-16304-3_2
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DOI: https://doi.org/10.1007/978-3-642-16304-3_2
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