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Silicon-based Devices and Materials for Nanoscale FETs

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Semiconductor-On-Insulator Materials for Nanoelectronics Applications

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Abstract

Silicon on insulator (SOI)-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon down to nm structures. An overview of the performance of nanoscale FETs, based on innovative concepts, technologies and device architectures, is addressed. The impact of alternative channel materials, source-drain contacts and multi-gates/channels on the performance and physical mechanisms in ultimate MOSFETs is highlighted. The interest of multi gate emerging and beyond-CMOS nanodevices for long term applications, based on nanowires or small slope switch structures for ultra low power applications is also presented. Finally, the flexibility of multi-gate and nanowire SOI structures for boosting the scalability and performance of DRAM, SRAM and flash memories is outlined.

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Acknowledgments

This work was partially supported by the European Network of Excellence NANOSIL (FP7) devoted to Silicon-based Nanodevices.

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Authors and Affiliations

  1. IMEP-LAHC/Sinano Institute, CNRS-Grenoble INP Minatec, 3 Parvis Louis Neel, 38016, Grenoble, France

    Francis Balestra

Authors
  1. Francis Balestra
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Correspondence to Francis Balestra .

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Editors and Affiliations

  1. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Sciences of Ukraine, Prospect Nauki 41, Kyiv, 03028, Ukraine

    Alexei Nazarov

  2. Tyndall National Institute, """Lee Maltings""", University College, Prospect Row, Cork, Ireland

    J.-P. Colinge

  3. IMEP-LAHC, Sinano Institute, rue Parvis Louis Néel 3, Grenoble Cedex 1, 38016, France

    Francis Balestra

  4. Microwave Laboratory, Université Catholique de Louvain, Place du Levant 3 á, Louvain-la-Neuve, 1348, Belgium

    Jean-Pierre Raskin

  5. Nanoelectronics Research Group, Departmento de Electrónica, Universidad de Granada, Granada, 18071, Spain

    Francisco Gamiz

  6. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Science of Ukraine, pr. Nauki 41, Kyiv, 03080, Ukraine

    V.S. Lysenko

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Balestra, F. (2011). Silicon-based Devices and Materials for Nanoscale FETs. In: Nazarov, A., Colinge, JP., Balestra, F., Raskin, JP., Gamiz, F., Lysenko, V. (eds) Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-15868-1_6

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