Abstract
Thermal effects in a coupled circuit-device system are modeled and numerically simulated. The circuit equations arise from modified nodal analysis. The transport in the semiconductor devices is modeled by the energy-transport equations for the electrons and the drift-diffusion equations for the holes, coupled to the Poisson equation for the electric potential. The lattice temperature is described by a heat equation with a heat source including energy relaxation heat, recombination heat, hole Joule heating, and radiation. The circuit-device model is coupled to a thermal network. The resulting system of nonlinear partial differential-algebraic equations is discretized in time using backward difference formulas and in space using (mixed) finite elements. Heating effects from numerical simulations in a pn-junction diode and a clipper circuit are presented.
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Brunk, M., Jüngel, A. (2010). Heating of Semiconductor Devices in Electric Circuits. In: Roos, J., Costa, L. (eds) Scientific Computing in Electrical Engineering SCEE 2008. Mathematics in Industry(), vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-12294-1_34
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DOI: https://doi.org/10.1007/978-3-642-12294-1_34
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