Abstract
Planar nanoscale transistors and cylindrical nanowire transistors are analyzed in the framework of coherent transport. The multi-terminal devices are modeled in the Landauer-Büttiker formalism, which is efficiently implemented using the R-matrix approach. For the planar case, the linear regime reveals Fabry-Perot type resonances in the source-drain conductance, while in the nonlinear regime a quantum mechanism for the drain current saturation is demonstrated. The advantages of new geometries, like the cylindrical nanowire transistors, are discussed in the context of self-consistent calculations.
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Nemnes, G., Wulf, U., Ion, L., Antohe, S. (2010). Ballistic Transistors: From Planar to Cylindrical Nanowire Transistors. In: Bârsan, V., Aldea, A. (eds) Trends in Nanophysics. Engineering Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-12070-1_6
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DOI: https://doi.org/10.1007/978-3-642-12070-1_6
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