Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays

  • T. Kühn
  • G.S. Paraoanu
Part of the Engineering Materials book series (ENG.MAT.)


The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a self-consistent review of sequential transport processes in such devices, based on the so-called “orthodox” model. We calculate numerically the current-voltage (IV) curves, the conductance versus bias voltage (GV) curves, and the associated thermal transport in symmetric and asymmetric two-junction arrays such as Coulomb-blockade thermometers (CBTs), superconducting-insulator-normal-insulator-superconducting (SINIS) structures, and superconducting single-electron transistors (SETs). We investigate the behavior of these systems at the singularity-matching bias points, the dependence of microrefrigeration effects on the charging energy of the island, and the effect of a finite superconducting gap on Coulomb-blockade thermometry.



We would like to thank J. P. Pekola and I. Maasilta for useful comments on the manuscript. T. K. would like to acknowledge financial support from the Emil Aaltonen foundation. The contribution of G.S.P. was supported by the Academy of Finland (Acad. Res. Fellowship 00857, and projects 129896, 118122, and 135135).


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© Springer –Verlag Berlin Heidelberg 2010

Authors and Affiliations

  1. 1.NanoScience Center and Department of PhysicsUniversity of JyväskyläJyväskyläFinland
  2. 2.Low Temperature LaboratorySchool of Science and Technology, Aalto UniversityAALTOFinland

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