Abstract
This chapter describes the structural and morphological characteristics of planar nonpolar and semipolar GaN films grown by hydride vapor phase epitaxy (HVPE). While smooth enough to allow device regrowth and fabrication, these films often contain ∼1010cm−2 threading dislocations and ∼105cm−1 basal plane stacking faults. Lateral epitaxial overgrowth (LEO) has been developed to largely eliminate dislocations and stacking faults in the overgrown material, resulting in significant improvements in surface morphology and luminescence characteristics of these films and optoelectronic devices grown upon them.
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Fini, P.T., Haskell, B.A. (2010). Nonpolar and Semipolar GaN Growth by HVPE. In: Ehrentraut, D., Meissner, E., Bockowski, M. (eds) Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04830-2_5
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DOI: https://doi.org/10.1007/978-3-642-04830-2_5
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