Abstract
In this chapter, the problems related to bulk crystallization of GaN by HVPE are discussed. High quality small single crystalline GaN seeds grown under high pressure and large, flat, free standing GaN substrates grown by HVPE were used in long duration HVPE experiments. The characterization results of the obtained bulk crystals suggest that strong dependence of physical properties (mostly oxygen content) on the orientation of the crystallization front is the main reason for strain and structural defects generation in the new grown material.
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Łucznik, B., Pastuszka, B., Kamler, G., Grzegory, I., Porowski, S. (2010). Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds. In: Ehrentraut, D., Meissner, E., Bockowski, M. (eds) Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04830-2_3
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