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In vivo dosimetry using MOSFET and TLD for Tomotherapy

  • Rajesh A. Kinhikar
  • Chandrshekhar M. Tambe
  • Dipak S. Dhote
  • Deepak D. Deshpande
Part of the IFMBE Proceedings book series (IFMBE, volume 25/1)

Abstract

The purpose of this work was to estimate skin dose for the patients treated with Tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The Tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

Keywords

Tomotherapy Skin dose MOSFET TLD 

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Copyright information

© Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  • Rajesh A. Kinhikar
    • 1
  • Chandrshekhar M. Tambe
    • 1
  • Dipak S. Dhote
    • 2
  • Deepak D. Deshpande
    • 1
  1. 1.Department of Medical PhysicsTata Memorial CentreMumbaiIndia
  2. 2.Brijlal Biyani Science CollegeAmravatiIndia

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