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Organic Thin-Film Transistors with Enhanced Sensing Capabilities

  • M. Daniela Angione
  • Francesco Marinelli
  • Antonio Dell’Aquila
  • Alessandro Luzio
  • Bruno Pignataro
  • Luisa Torsi
Chapter
Part of the Springer Proceedings in Physics book series (SPPHY, volume 129)

Abstract

Organic thin-film transistors, used as sensing devices, have been attracting quite a considerable interest lately as they offer advantages such as multi parameter behaviour and possibility to be quite easily molecularly tuned for the detection of specific analytes. Here, a study on the dependences of the devices responses on important parameters such as the active layer thickness and its morphology as well as on the transistor channel length is presented. To introduce the least number of variables the system chosen for this study is quite a simple and well assessed one being based on a thiophene oligomer active layer exposed to 1-butanol vapours.

Keywords

Active Layer Contact Resistance Screw Dislocation Gate Dielectric Active Layer Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  • M. Daniela Angione
    • 1
  • Francesco Marinelli
    • 1
  • Antonio Dell’Aquila
    • 1
  • Alessandro Luzio
    • 2
  • Bruno Pignataro
    • 3
  • Luisa Torsi
    • 1
  1. 1.Dipartimento di ChimicaUniversità degli Studi di BariBariItaly
  2. 2.PLAST_ICS – Superlab – Consorzio Catania RicercheCataniaItaly
  3. 3.Dipartimento di Chimica Fisica “F. Accascina”Università degli Studi di PalermoPalermoItaly

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