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Interface Controlled Organic Thin Films pp 189–193Cite as

Negative Differential Resistance in C60 Diodes

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 129))

Abstract

Morphology studies and current-voltage (IV) measurements of C60 thin film diodes in the temperature range of 300–4.2 K are presented. For defined evaporation parameters orientation domains along the growth direction are demonstrated by cross section transmission electron microscopy. From the electrical characterization the fullerene diodes exhibit space charge limited currents which follow a power law dependency. At current densities above 100 mA cm-2 and temperatures below 200 K reversible voltage instabilities (S-shape IV characteristics, negative differential resistance) arise. The instabilities are similar to charge transport effects in amorphous inorganic semiconductors.

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Authors and Affiliations

  1. Linz Institute for Organic Solar Cells, Physical Chemistry, Johannes Kepler University, Altenbergerstraße, Linz, 69, 4040, Austria

    Philipp Stadler, Anita Fuchsbauer, Gebhard J. Matt, Helmut Neugebauer & Serdar N. Sariciftci

  2. Technische Service Einheit (TSE), Johannes Kepler University Linz, Altenbergerstraße, Linz, 69, 4040, Austria

    Günther Hesser

  3. Institute for Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstraße, Linz, 69, 4040, Austria

    Thomas Fromherz

Authors
  1. Philipp Stadler
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  2. Anita Fuchsbauer
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  3. Günther Hesser
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  4. Thomas Fromherz
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  5. Gebhard J. Matt
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  6. Helmut Neugebauer
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  7. Serdar N. Sariciftci
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Correspondence to Philipp Stadler .

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    © 2009 Springer-Verlag Berlin Heidelberg

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    Stadler, P. et al. (2009). Negative Differential Resistance in C60 Diodes. In: Al-Shamery, K., Horowitz, G., Sitter, H., Rubahn, HG. (eds) Interface Controlled Organic Thin Films. Springer Proceedings in Physics, vol 129. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-95930-4_31

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