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Oxide and Nitride Semiconductors pp 225–259Cite as

Growth of Nonpolar GaN and ZnO Films

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Part of the book series: Advances in Materials Research ((ADVSMATERIALS,volume 12))

Growing high quality nonpolar films is difficult compared to polar films. Pure a-plane nonpolar films have been grown without difficulty; however, growing pure m-plane films is not easy and other planes coexist parallel to the interface. In this chapter, growth of nonpolar GaN and ZnO films is described. Growth characteristics and properties of nonpolar (a-plane and m-plane) and semipolar GaN films, and nonpolar ZnO films are discussed. The emphasis is on the typical features of growth, structural properties, and procedures to grow nonpolar films with improved crystal quality. The results of lateral epitaxial overgrowth of nonpolar GaN films are also discussed.

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Authors
  1. S. -K. Hong
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  2. H. -J. Lee
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Editors and Affiliations

  1. Center for Interdisciplinary Research, Tohoku University, Aramaki Aza-Aoba, Aoba-ku, Sendai, 980-8578, Japan

    Takafumi Yao

  2. School of Nanoscience and Technology, Chungnam National University, Gung-dong 220, Youseong-gu, Daejeon, 305-764, Republic of Korea

    Soon-Ku Hong

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Hong, S.K., Lee, H.J. (2009). Growth of Nonpolar GaN and ZnO Films. In: Yao, T., Hong, SK. (eds) Oxide and Nitride Semiconductors. Advances in Materials Research, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88847-5_5

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