Abstract
We present both optically and electrically driven room temperature emission from single CdSe quantum dots, realized by self-organized epitaxial growth. A structure design that embeds the CdSe quantum dots into ZnSSe/MgS barriers results in high carrier confinement and exceptionally large quantum efficiencies at room temperature. Microphotoluminescence with a spatial resolution of 200 nm exhibits single dot emission that remains visible up to 300 K. When integrating these quantum dots into p-i-n diode structures, an electrically driven single dot emitter with pronounced room temperature emission is realized. The linewidth of the single dot emission increases with temperature due to exciton-phonon interaction and reaches 26 meV at 300 K. This value is only slightly larger than the biexcitonic binding energy, opening a way to solid state single photon emitters operating at elevated temperatures.
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Kümmell, T. et al. (2009). Electrically Driven Single Quantum Dot Emitter Operating at Room Temperature. In: Haug, R. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 48. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85859-1_6
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DOI: https://doi.org/10.1007/978-3-540-85859-1_6
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