Abstract
Nuclear spin manipulation using an interface of diluted magnetic semiconductors (DMSs) is proposed. On the basis of the first-principles electronic structure calculation, we show that the hyperfine fields at an impurity site in the interface between a DMS and a base substance is dramatically changed by an external electric field. The electric field dependence of the hyperfine fields at the impurity nucleus in the interface of (InMn)As and (GaMn)As is examined.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Machida, T., Yamazaki, T., et al.: Appl. Phys. Lett. 82, 409 (2003)
Kane, B.E.: Nature 393, 133 (1998)
Akai, H.: Phys. Rev. Lett. 81, 3002 (1998)
Akai, H., Akai, M., Blügel, S., et al.: Prog. Theor. Phys. 101, 11 (1990)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer Science + Business Media B.V.
About this paper
Cite this paper
Ogura, M., Akai, H. (2008). Nuclear spin manipulation in interfaces of diluted magnetic semiconductors. In: Pasquevich, A., Rentería, M., Saitovitch, E.B., Petrilli, H. (eds) HFI/NQI 2007. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85320-6_9
Download citation
DOI: https://doi.org/10.1007/978-3-540-85320-6_9
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-85319-0
Online ISBN: 978-3-540-85320-6
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)