Abstract
This paper introduces a new concept in RF MEMS switches intended for high RF power applications. The novel switch architecture employs electrothermal hydraulic microactuators to provide mechanical actuation and 3D out-of-plane silicon cantilevers that have both spring action and latching mechanism, to create an OFF-state gap separation distance of 200 μm between ohmic contacts. Having simple assembly, many of the inherent problems associated with the more traditional in-plane suspension bridge and cantilever beam type architectures can be overcome. A SPST switch has been investigated and its ON-state insertion loss and return loss are less than 0.5 dB and greater than 15 dB, respectively; while OFF-state isolation is better than 30 dB, up to 12 GHz.
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© 2008 Springer-Verlag Berlin Heidelberg
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Choi, JY. (2008). RF MEMS Switch Using Silicon Cantilevers. In: Yoo, SD. (eds) EKC2008 Proceedings of the EU-Korea Conference on Science and Technology. Springer Proceedings in Physics, vol 124. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85190-5_13
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DOI: https://doi.org/10.1007/978-3-540-85190-5_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-85189-9
Online ISBN: 978-3-540-85190-5
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