Abstract
Dilute nitrides alloys, as GaAsxN1−x, have been extensively studied in the last few years since the presence of small amounts of N in III–V semiconductors leads to major changes in the physical properties of the host materials. In particular, the strong reduction of band gap induced by N enables important technological applications in the field of active optical devices and microelectronics.
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M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, M. Lazzarino, G. Bias, M. Piccin, S. Rubini and A. Franciosi, Adv. Mat. 18, (2006), p. 1993.
A.A. Suvorova, S. Samarin, Surface Science 601 (2007) p. 4428
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Felisari, L. et al. (2008). Secondary Electrons Characterization of Hydrogenated Dilute Nitrides. In: Luysberg, M., Tillmann, K., Weirich, T. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85156-1_271
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DOI: https://doi.org/10.1007/978-3-540-85156-1_271
Publisher Name: Springer, Berlin, Heidelberg
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