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ICAME 2007 pp 621–625Cite as

Mössbauer study of Fe in 3C-SiC following 57Mn implantation

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Abstract

Our investigations on substitutional and interstitial Fe in the group IV semiconductors, from 57Fe Mössbauer measurements following 57Mn implantation, have been continued with investigations in 3C-SiC. Mössbauer spectra were collected after implantation and measurement at temperatures from 300 to 905 K. Following comparison with Mössbauer parameters for Fe in Si, diamond and Ge, four Fe species are identified: two due to Fe in tetrahedral interstitial sites surrounded, respectively, by four C atoms (Fei.C) or four Si atoms (Fei,Si) and two to Fe in (or close to) defect free or implantation damaged substitutional sites. An annealing stage at 300–500 K is evident. Above 600 K the Fei,Si fraction decreases markedly, reaching close to zero intensity at 905 K. This is accompanied by a corresponding increase in the Fei,C fraction.

Keywords

  • 3C-SiC
  • 57Mn implantation
  • Mössbauer spectroscopy
  • Fe sites

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Authors and Affiliations

  1. School of Physics, University of KwaZulu-Natal, Durban, 4041, South Africa

    K. Bharuth-Ram & V. V. Naicker

  2. iThemba Labs, Somerset West, 7129, South Africa

    K. Bharuth-Ram

  3. Department of Physics and Astronomy, Aarhus University, 8000, Aarhus, Denmark

    H. P. Gunnlaugsson & G. Weyer

  4. Laboratorio Nazionale MDM-CNR-INFM, 20041, Agrate Brianza (M1), Italy

    R. Mantovan

  5. School of Physics, University of the Witwatersrand (WITS), Johannesburg, 2050, South Africa

    D. Naidoo

  6. Hahn-Meitner Institute, 14109, Berlin, Germany

    R. Sielemann

  7. EP Division, CERN, CH-1211, Geneva, 23, Switzerland

    Th. Aigne

Authors
  1. K. Bharuth-Ram
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  2. H. P. Gunnlaugsson
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  3. R. Mantovan
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  4. V. V. Naicker
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  5. D. Naidoo
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  6. R. Sielemann
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  7. G. Weyer
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  8. Th. Aigne
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Consortia

ISOLDE Collaboration

Corresponding author

Correspondence to K. Bharuth-Ram .

Editor information

Editors and Affiliations

  1. Indian Institute of Technology Kanpur, Kanpur, India

    N. S. Gajbhiye

  2. University of Pune, Pune, India

    S. K. Date

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Bharuth-Ram, K. et al. (2008). Mössbauer study of Fe in 3C-SiC following 57Mn implantation. In: Gajbhiye, N.S., Date, S.K. (eds) ICAME 2007. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-78697-9_84

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