Summary
Optimization of growth conditions is most important for extracting desired material properties, but it always requires time-consuming experiments. The temperature gradient method was applied for high-throughput optimization of the growth temperature by pulsed laser deposition to ZnO-based heterostructures. Surface morphology, photoluminescence, and electrical transport properties depend systematically on the growth temperature. Consequently, enhancement of two-dimensional growth, as detected from atomic force microscope images, can elucidate good physical properties, e.g., the observation of higher-order exciton emissions and highest electron mobility. By further optimizing the structure of heterojunction, we found growth conditions enabling the quantum Hall effect at the ZnO / MgxZn1−xO heterointerface.
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Tsukazaki, A., Ohtomo, A., Kawasaki, M. (2008). Epitaxial Growth and Transport Properties of High-Mobility ZnO-Based Heterostructures. In: Fujikawa, Y., Nakajima, K., Sakurai, T. (eds) Frontiers in Materials Research. Advances in Materials Research, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-77968-1_5
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DOI: https://doi.org/10.1007/978-3-540-77968-1_5
Publisher Name: Springer, Berlin, Heidelberg
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