Summary
Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented (i.e., (001)) silicon wafers, which have fourfold symmetry, has been a longstanding challenge. We demonstrate that, by using symmetry-converted (111) silicon-on-insulator, we can integrate wurtzite-structure gallium nitride, which has threefold symmetry, with Si (001). The stability of the symmetry-converted Si (111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si (001) base wafers.
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Fujikawa, Y., Yamada-Takamura, Y., Wang, Z.T., Yoshikawa, G., Sakurai, T. (2008). GaN Integration on Si via Symmetry-Converted Silicon-on-Insulator. In: Fujikawa, Y., Nakajima, K., Sakurai, T. (eds) Frontiers in Materials Research. Advances in Materials Research, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-77968-1_22
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DOI: https://doi.org/10.1007/978-3-540-77968-1_22
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