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Localized Photon Model Including Phonons’ Degrees of Freedom

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Progress in Nano-Electro-Optics VI

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 139))

Abstract

Optical near fields have been used in high-resolution microscopy/spectroscopy for a variety of samples [1], especially for a single molecule [2] and a single quantum dot [3], as well as for nanofabrication [4]–[6]. These applications are based on the fact that optical near-field probes, whose tips are sharpened to a few nanometers, can generate a light field localized around the apex of the same order. The spatial localization is, of course, independent of the wavelength of incident light, and the size of the localization is much smaller than the wavelength. It means that optical near-field probes are essential elements in these applications.

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Author information

Authors and Affiliations

  1. Department of Physics, Tokyo Institute of Technology, 2-12-1/H79 O-okayama, Meguro-ku, Tokyo, 152-8551, Japan

    K. Kobayashi

  2. Department of Physics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, 152-8551, Japan

    Y. Tanaka

  3. School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan

    T. Kawazoe & M. Ohtsu

Authors
  1. K. Kobayashi
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  2. Y. Tanaka
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  3. T. Kawazoe
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  4. M. Ohtsu
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Editor information

Editors and Affiliations

  1. Department of Electronics Engineering School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

    Motoichi Ohtsu

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Kobayashi, K., Tanaka, Y., Kawazoe, T., Ohtsu, M. (2008). Localized Photon Model Including Phonons’ Degrees of Freedom. In: Ohtsu, M. (eds) Progress in Nano-Electro-Optics VI. Springer Series in Optical Sciences, vol 139. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-77895-0_2

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