Abstract
The chapter presents a review of the growth of single-crystal bulk semiconductors by liquid-phase electroepitaxy (LPEE). Following a short introduction, early modeling and theoretical studies on LPEE are briefly introduced. Recent experimental results on LPEE growth of GaAs/GaInAs single crystals under a static applied magnetic field are discussed in detail. The results of three-dimensional numerical simulations carried out for LPEE growth of GaAs under various electric and magnetic field levels are presented. The effect of magnetic field nonuniformities is numerically examined. Crystal growth experiments show that the application of a static magnetic field in LPEE growth of GaAs increases the growth rate very significantly. A continuum model to predict such high growth rates is also presented. The introduction of a new electric mobility in the model, i.e., the electromagnetic mobility, allows accurate predictions of both the growth rate and the growth interface shape. Space limitation required the citation of a limited number of references related to LPEEĀ [29.1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40,41,42,43,44,45,46,47,48,49,50,51,52,53,54,55,56,57,58,59,60,61,62,63,64,65,66,67,68,69,70,71,72,73]. For details of many aspects of the LPEE growth process and its historical developments, the reader is referred to these references and also others cited therein.
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Abbreviations
- 2-D:
-
two-dimensional
- 3-D:
-
three-dimensional
- HEMT:
-
high-electron-mobility transistor
- LPD:
-
liquid-phase diffusion
- LPE:
-
liquid-phase epitaxy
- LPEE:
-
liquid-phase electroepitaxy
- OEIC:
-
optoelectronic integrated circuit
- SCC:
-
source-current-controlled
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Dost, S. (2010). Liquid-Phase Electroepitaxy of Semiconductors. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_29
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