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Growth and Characterization of Silicon Carbide Crystals

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Book cover Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

Abstract

Silicon carbide is a semiconductor that is highly suitable for various high-temperature and high-power electronic technologies due to its large energy bandgap, thermal conductivity, and breakdown voltage, among other outstanding properties. Large-area high-quality single-crystal wafers are the chief requirement to realize the potential of silicon carbide for these applications. Over the past 20 years, considerable advances have been made in silicon carbide single-crystal growth technology through understanding of growth mechanisms and defect nucleation. Wafer sizes have been greatly improved from wafer diameters of a few millimeters to 100 mm, with overall dislocation densities steadily reducing over the years. Device-killing micropipe defects have almost been eliminated, and the reduction in defect densities has facilitated enhanced understanding of various defect configurations in bulk and homoepitaxial layers. Silicon carbide electronics is expected to continue to grow and steadily replace silicon, particularly for applications under extreme conditions, as higher-quality, lower-priced large wafers become readily available.

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Abbreviations

2-D:

two-dimensional

AB:

Abrahams and Burocchi

AFM:

atomic force microscopy

BPD:

basal-plane dislocation

CD:

convection diffusion

CVD:

chemical vapor deposition

HLA:

half-loop array

IMPATT:

impact ionization avalanche transit-time

LAGB:

low-angle grain boundary

LED:

light-emitting diode

LPE:

liquid-phase epitaxy

MESFET:

metal-semiconductor field effect transistor

MOSFET:

metal–oxide–semiconductor field-effect transistor

PVT:

physical vapor transport

REDG:

recombination enhanced dislocation glide

SD:

screw dislocation

SEM:

scanning electron microscope

SEM:

scanning electron microscopy

SF:

stacking fault

SSM:

sublimation sandwich method

SWBXT:

synchrotron white beam x-ray topography

TED:

threading edge dislocation

TEM:

transmission electron microscopy

TRAPATT:

trapped plasma avalanche-triggered transit

TSD:

threading screw dislocation

TV:

television

XRT:

x-ray topography

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Authors and Affiliations

  1. ARC Energy, 18 Celina Avenue, Unit 77, 03063, Nashua, NH, USA

    Govindhan Dhanaraj

  2. Department of Materials Science and Engineering, Stony Brook University, 310 Engineering Building, 11794-2275, Stony Brook, NY, USA

    Balaji Raghothamachar

  3. Department of Materials Science and Engineering, Stony Brook University, 11794-2275, Stony Brook, NY, USA

    Michael Dudley

Authors
  1. Govindhan Dhanaraj
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  2. Balaji Raghothamachar
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  3. Michael Dudley
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Correspondence to Govindhan Dhanaraj , Balaji Raghothamachar or Michael Dudley .

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Editors and Affiliations

  1. Advanced Renewable Energy Company, 18 Celina Avenue, 03063, Nashua, NH, USA

    Govindhan Dhanaraj Dr.

  2. Department of Geology, University of Mysore, Manasagangotri, 570 006, Mysore, India

    Kullaiah Byrappa Ph.D.

  3. University of North Texas, 1155 Union Circle, 76203-5017, Denton, TX, USA

    Vishwanath Prasad Dr.

  4. Department of Materials Science and Engineering, Stony Brook University, 11794-2275, Stony Brook, NY, USA

    Michael Dudley Dr.

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Dhanaraj, G., Raghothamachar, B., Dudley, M. (2010). Growth and Characterization of Silicon Carbide Crystals. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_23

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