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Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers

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Dilute III-V Nitride Semiconductors and Material Systems

Part of the book series: Materials Science ((SSMATERIALS,volume 105))

An analysis of GaInNAs for optoelectronic device applications is performed. Design rules are provided for GaInNAs lasers in terms of laser parameters such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.

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Author information

Authors and Affiliations

  1. Department of Informatics and Telecommunications, University of Athens, Panepistimiopolis, Ilisia, Athens, 15784, Greece

    D. Alexandropoulos

  2. Department of Electronics Systems Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK

    M. J. Adams

  3. Department of Electrical & Electronic Engineering, University of Bristol, Merchant Venturers Building Woodland Road, Bristol, BS8 1UB, UK

    J. Rorison

Authors
  1. D. Alexandropoulos
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  2. M. J. Adams
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  3. J. Rorison
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Editor information

Editors and Affiliations

  1. Physics Department, Solid-State Physics Division, Istanbul University, Vezneciler, Istanbul, 34134, Turkey

    AyÅŸe Erol (Faculty of Science) (Faculty of Science)

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© 2008 Springer-Verlag Berlin Heidelberg

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Alexandropoulos, D., Adams, M.J., Rorison, J. (2008). Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers. In: Erol, A. (eds) Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol 105. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74529-7_17

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