Recently, we are entering a new stage of electronics, in which time-controlled transport of individual electrons can be achieved by using nanodevices, so-called single-electron tunneling devices. Also, it is recognized that single-electron transport is highly sensitive to ultimately small environmental charges such as a photogenerated electron and a doped ion, leading to a new paradigm in electronic devices working with a few elemental particles, i.e., electrons, phonons and ions.
- Gate Voltage
- Field Effect Transistor
- Photogenerated Electron
- Gate Bias
- Capacitance Array
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Tabe, M., Nuryadi, R., Burhanudin, Z.A., Moraru, D., Yokoi, K., Ikeda, H. (2007). “Manipulation of single-electrons in Si nanodevices. In: Jabłoński, R., Turkowski, M., Szewczyk, R. (eds) Recent Advances in Mechatronics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-73956-2_98
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