We consider single electron transport through a II–VI semiconductor quantum dot doped with a single Mn atom. The spin dynamics of the Mn atom is controlled by the carriers electrically injected in the dot. We find that the chargevs.- gate curve can display hysteretic behaviour when the Mn-carrier interaction is anisotropic. We discuss the origin and implication of this result.
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Fernández-Rossier, J., Aguado, R. (2008). Hysteretic Linear Conductance in Single Electron Transport through a Single Atom Magnet. In: Bonilla, L.L., Moscoso, M., Platero, G., Vega, J.M. (eds) Progress in Industrial Mathematics at ECMI 2006. Mathematics in Industry, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71992-2_70
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DOI: https://doi.org/10.1007/978-3-540-71992-2_70
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