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Abstract

Throughout the book we have made quite extensive use of results from device simulations. This is due to the fact that only very few problems can be solved analytically. Those problems are usually one-dimensional and idealized assumptions (such as homogeneous doping in distinct regions of the device) are made.

Keywords

Space Charge Device Simulation Occupation Probability Hole Density Stationary Situation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2007

Authors and Affiliations

  • Gerhard Lutz
    • 1
  1. 1.Semiconductor Laboratory of the Max-Planck-Institutes for Physics and Extraterrestrial PhysicsMunichGermany

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