Throughout the book we have made quite extensive use of results from device simulations. This is due to the fact that only very few problems can be solved analytically. Those problems are usually one-dimensional and idealized assumptions (such as homogeneous doping in distinct regions of the device) are made.


Space Charge Device Simulation Occupation Probability Hole Density Stationary Situation 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2007

Authors and Affiliations

  • Gerhard Lutz
    • 1
  1. 1.Semiconductor Laboratory of the Max-Planck-Institutes for Physics and Extraterrestrial PhysicsMunichGermany

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