Summary
For the first time MOSFET transistor performance featuring dielectric Lanthanum Hafnium Oxide (LHO) deposited by molecular beam epitaxy are presented. These dielectrics were deposited on a SiO2-like surface and integrated into a conventional etched-gate flow featuring TaN as gate electrode. The results for reference HfO2 deposited in the same MBE tool are comparable to standard (atomic layer deposited) HfO2 in the same process flow. Long-channel LHO devices exhibit reasonably good performance, while short-channel devices are sensitive to some process issues. LHO devices exhibit excellent leakage and minimal V t -instability compared to HfO2.
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References
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Pantisano, L. et al. (2007). Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow. In: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M. (eds) Advanced Gate Stacks for High-Mobility Semiconductors. Advanced Microelectronics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71491-0_17
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DOI: https://doi.org/10.1007/978-3-540-71491-0_17
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