Abstract
We examine performance enhancement of p-channel SiGe devices using our particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement effects. We find surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions. At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of p-channel SiGe MOSFETs versus their conventional Si counterparts.
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Vasileska, D., Krishnan, S., Fischetti, M. (2007). Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices. In: Boyanov, T., Dimova, S., Georgiev, K., Nikolov, G. (eds) Numerical Methods and Applications. NMA 2006. Lecture Notes in Computer Science, vol 4310. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-70942-8_22
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DOI: https://doi.org/10.1007/978-3-540-70942-8_22
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