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Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices

  • Alexander I. Fedoseyev
  • Marek Turowski
  • Ashok Raman
  • Michael L. Alles
  • Robert A. Weller
Part of the Lecture Notes in Computer Science book series (LNCS, volume 5102)

Abstract

This paper describes the new CFDRC mixed-mode simulator which combines multiscale 3D Technology Computer Aided Design (TCAD) device models (fluid carrier transport and nuclear ion track impact), and advanced compact transistors models. Key features include an interface and 3D adaptive meshing to allow simulations of single event radiation effects with nuclear reactions and secondary particles computed by Vanderbilt’s MRED/Geant4 tools.

Keywords

Nanoscale device radiation event nuclear reaction 3D transient simulation 3D adaptive mesh generation hydrodynamics drift-diffusion multiscale finite volume method computer-aided-design 

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Copyright information

© Springer-Verlag Berlin Heidelberg 2008

Authors and Affiliations

  • Alexander I. Fedoseyev
    • 1
  • Marek Turowski
    • 1
  • Ashok Raman
    • 1
  • Michael L. Alles
    • 2
  • Robert A. Weller
    • 2
  1. 1.CFD Research Corporation (CFDRC)Huntsville
  2. 2.Vanderbilt UniversityNashvilleUSA

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