Abstract
In extreme nonlinear optics the Rabi frequency is comparable to or even larger than the transition frequency. Numerical solutions of the semiconductor Bloch equations show that the response of semiconductor quantum wells and wires differs characteristically from that of a two-level system in this highly nonperturbative regime. The main reason for these differences is the continuous electronic dispersion, and, to a lesser degree, the Coulombic interaction effects.
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Golde, D., Meier, T., Koch, S.W. (2007). Modeling of the Extreme Nonlinear Optical Response of Semiconductor Nanostructures. In: Corkum, P., Jonas, D.M., Miller, R.J.D., Weiner, A.M. (eds) Ultrafast Phenomena XV. Springer Series in Chemical Physics, vol 88. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-68781-8_221
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DOI: https://doi.org/10.1007/978-3-540-68781-8_221
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-68779-5
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