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Wide Bandgap Semiconductors pp 281–327Cite as

Novel Nano-Heterostructure Materials and Related Devices

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Author information

Authors and Affiliations

  1. Hokkaido University, Sapporo, Japan

    Hidekazu Kumano

  2. Hokkaido University, Sapporo, Japan

    Ikuo Suemune

  3. Sophia University, Tokyo, Japan

    Katsumi Kishino (Professor)

  4. Kyoto University, Kyoto, Japan

    Shizuo Fujita

  5. Tokyo Institute of Technology, Tokyo, Japan

    Adarsh Sandhu (Associate Professor)

  6. Toshiba Corporation, Japan

    Nobuo Suzuki

  7. Tokyo University of Science, Tokyo, Japan

    Kazuhiro Ohkawa

Authors
  1. Hidekazu Kumano
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  2. Ikuo Suemune
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  3. Katsumi Kishino
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  4. Shizuo Fujita
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  5. Adarsh Sandhu
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  6. Nobuo Suzuki
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  7. Kazuhiro Ohkawa
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Editor information

Editors and Affiliations

  1. The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Chiba University, Chiba, Japan

    Kiyoshi Takahashi (Professor Emeritus) (Professor Emeritus)

  2. The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Chiba University, Chiba, Japan

    Akihiko Yoshikawa (Professor) (Professor)

  3. Tokyo Institute of Technology, Tokyo, Japan

    Adarsh Sandhu (Associate Professor) (Associate Professor)

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Kumano, H. et al. (2007). Novel Nano-Heterostructure Materials and Related Devices. In: Takahashi, K., Yoshikawa, A., Sandhu, A. (eds) Wide Bandgap Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-47235-3_5

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