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Wide Bandgap Semiconductors pp 25–96Cite as

Fundamental Properties of Wide Bandgap Semiconductors

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Authors and Affiliations

  1. Saitama University, Saitama, Japan

    Sadafumi Yoshida (Professor)

  2. Osaka University, Osaka, Japan

    Toshimichi Ito

  3. Kochi University of Technology, Kochi, Japan

    Akio Hiraki (Professor Emeritus)

  4. Okayama University of Science, Okayama, Japan

    Hiroshi Saito

  5. Kyoto University, Kyoto, Japan

    Shizuo Fujita

  6. Chiba University, Chiba, Japan

    Yoshihiro Ishitani

  7. University of Tokushima, Tokushima, Japan

    Shiro Sakai

  8. Yamaguchi University, Yamaguchi, Japan

    Yoichi Yamada

  9. Kyoto University, Kyoto, Japan

    Yoichi Kawakami (Associate Professor)

  10. Hokkaido University, Sapporo, Japan

    Ikuo Suemune

  11. Mie University, Mie, Japan

    Kazumasa Hiramatsu

  12. Kogakuin University, Tokyo, Japan

    Hideo Kawanishi (Professor)

  13. Meijo University, Nagoya, Japan

    Hiroshi Amano

  14. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Hajime Okumura

  15. Nagoya University, Nagoya, Japan

    Takashi Mizutani

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  1. Sadafumi Yoshida
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  2. Toshimichi Ito
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Editor information

Editors and Affiliations

  1. The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Chiba University, Chiba, Japan

    Kiyoshi Takahashi (Professor Emeritus) (Professor Emeritus)

  2. The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Chiba University, Chiba, Japan

    Akihiko Yoshikawa (Professor) (Professor)

  3. Tokyo Institute of Technology, Tokyo, Japan

    Adarsh Sandhu (Associate Professor) (Associate Professor)

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© 2007 Springer-Verlag Berlin Heidelberg

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Yoshida, S. et al. (2007). Fundamental Properties of Wide Bandgap Semiconductors. In: Takahashi, K., Yoshikawa, A., Sandhu, A. (eds) Wide Bandgap Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-47235-3_2

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