Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Jaeger, R.C.: Modular series on solid state devices. In: Neudeck, G.W., Pierret, R.F. (eds.) Introduction to Microelectronic Fabrication, vol. V. Addison-Welsley, Massachusetts (1988).
Kanaya, K., Koga, K., Toki, J.: Phys E: Sci. Instrum. 5, 641-648 (1972).
Law, M.E., Rafferty, C.S., Chin, G., Lin, C.C., Hansen, S.E.: User’s Reference Manual (SUPREM), Stanford University (1986).
Muller, R.S., Kamins, T.I.: Device Electronics for Integrated Circuits, 2nd edn. Wiley, New York (1986).
Ohzone, T., Shimura, H., Tsuji, K., Hirao, T.: Silicon-gate n-well CMOS process by full ion-implantation technology. IEEE Trans. Electron Devices, 27, 1789 (1980).
Park, D-G., Cho, H-J., Yeo, I-S., Roh, J-S., Hwang, J-M.: Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor system. Appl. Phys. Lett. 77, 2207−2209 (2000).
Quevedo-Lopez, M.A., El-Bouanani, M., Kim, M.J., Gnade, B.E., Wallace, R.M., Visokay, M.R., Li-Fatou, A., Bevan, M.J., Colombo, L.: Phosphorus and arsenic penetration studies through HfSi xOy and HfSi xOyNz films. Appl. Phys. Lett. 81, 1609−1611 (2002).
Rubin, L., Poate, J.: Ion Implantation in silicon technology. Indus. Physicist 9(3), 12 (2003).
Schaber, H., Criegern, R.V., Weitzel, I.: Analysis of polycrystalline Si diffusion sources by secondary ion mass spectrometry. J. Appl. Phys. 58, 4036−4042 (1985).
Shao, L., Chen, J., Zhang, J., Tang, D., Patel, S., Liu, J., Wang, X., Chu, W-K.: Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation. J. Appl. Phys. 96, 919−921 (2004).
Wolf, S., Tauber, R.N.: Silicon Processing for the VLSI Era Volum1-Process Technology, pp. 261. Lattice, California (1986).
Yau, L.D.: A simple theory to predict the threshold voltage of short-channel IGFET’s. Solid State Electron 17, 1059-1063 (1974).
Suggested Readings
Einspruch, N.G., Gildenblat, G.S.: VLSI Electronics Microstructure Science, Advanced MOS Device Physics, vol. 18. Academic, California (1989).
Ghandi, S.K.: VLSI Fabrication Principles: Silicon and Gallium Arsenide. Wiley, New York (1994).
Grove, A.S.: Physics and Technology of Semiconductor Devices. Wiley, New York (1967).
Mayer, J.W., Lau, S.S.: Electronic Materials Science: For Integrated Circuits in Si and GaAs. Macmillan, New York (1990).
Rimini, E.: Ion Implantation: Basics to Device Fabrication. Kluwer, Boston (1995).
Sze, S.M.: VLSI Technology. McGraw-Hill, New York (1988).
Rights and permissions
Copyright information
© 2006 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
(2006). Application of Ion Implantation Techniques in CMOS Fabrication. In: Ion Implantation and Synthesis of Materials. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-45298-0_14
Download citation
DOI: https://doi.org/10.1007/978-3-540-45298-0_14
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-23674-0
Online ISBN: 978-3-540-45298-0
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)