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Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

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Ferroelectric Random Access Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 93))

Abstract

Recent research by our group, concerned with the preparation of ferroelectric thin films by MOCVD, is summarized. MOCVD has been investigated as a most practical preparation method to realize a high-density FeRAM, because of the good step coverage and the uniform composition and film thickness over a large area. In addition, it has recently become possible to decrease the process temperature to obtain films retaining a large remanent polarization by MOCVD. In fact, Pb(Zr,Ti)O3 (PZT) and SrBi2Ta2O9 (SBT) films having good ferroelectricity were obtained at 415 and 570 °C, respectively. Moreover, new materials to overcome the problem of the present materials, such as PZT, SBT, and (Bi,La)4Ti3O12 (BLT), were discovered by using MOCVD because the composition of the film was easily changed by the input source gas composition.

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Authors and Affiliations

  1. Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226--8502, Japan

    Hiroshi Funakubo

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  1. Hiroshi Funakubo
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Correspondence to Hiroshi Funakubo .

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Editors and Affiliations

  1. Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, 226-8503, Yokohama, Japan

    Hiroshi Ishiwara

  2. Graduate School of Engineering Science, Department of Systems Innovation, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Osaka, Japan

    Masanori Okuyama

  3. Silicon Technology Laboratories, Fujitsu Laboratories Ltd., 243-0197, Atsugi, Japan

    Yoshihiro Arimoto

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Funakubo, H. Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD. In: Ishiwara, H., Okuyama, M., Arimoto, Y. (eds) Ferroelectric Random Access Memories. Topics in Applied Physics, vol 93. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-45163-1_7

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  • DOI: https://doi.org/10.1007/978-3-540-45163-1_7

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-40718-8

  • Online ISBN: 978-3-540-45163-1

  • eBook Packages: Springer Book Archive

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