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Optical Studies of Electric-Field-Induced Electron and Hole Transient Transports and Optical Phonon Instability in Semiconductor Nanostructures

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Ultrafast Dynamical Processes in Semiconductors

Part of the book series: Topics in Applied Physics ((TAP,volume 92))

Abstract

In this chapter the use of picosecond/subpicosecond time-resolved/transient Raman spectroscopy to study electric-field-induced transient carrier transport and longitudinal optical phonons in semiconductor nanostructures is demonstrated. The important physics behind transient carrier transport in nanostructure semiconductors is revealed. Experimental results on electron-velocity overshoot in a GaAs-based p--i--n nanostructure are presented and discussed. In addition, electron ballistic transport in an InP-based p--i--n nanostructure and electron- as well as hole-velocity overshoots in an Al\(_{0.3}\)Ga\(_{0.7}\)As-based p--i--n nanostructure are demonstrated and discussed. Cerenkov generation of optical phonons by drifting electrons in GaAs-based p--i--n nanostructure is reported. Finally, some future challenging experiments related to these novel transient carrier transport phenomena are addressed.

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Tsen, KT. Optical Studies of Electric-Field-Induced Electron and Hole Transient Transports and Optical Phonon Instability in Semiconductor Nanostructures. In: Tsen, KT. (eds) Ultrafast Dynamical Processes in Semiconductors. Topics in Applied Physics, vol 92. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-44879-2_5

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  • DOI: https://doi.org/10.1007/978-3-540-44879-2_5

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-40239-8

  • Online ISBN: 978-3-540-44879-2

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