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Optical Studies of Electric-Field-Induced Electron and Hole Transient Transports and Optical Phonon Instability in Semiconductor Nanostructures

  • Kong-Thon Tsen
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 92)

Abstract

In this chapter the use of picosecond/subpicosecond time-resolved/transient Raman spectroscopy to study electric-field-induced transient carrier transport and longitudinal optical phonons in semiconductor nanostructures is demonstrated. The important physics behind transient carrier transport in nanostructure semiconductors is revealed. Experimental results on electron-velocity overshoot in a GaAs-based p--i--n nanostructure are presented and discussed. In addition, electron ballistic transport in an InP-based p--i--n nanostructure and electron- as well as hole-velocity overshoots in an Al\(_{0.3}\)Ga\(_{0.7}\)As-based p--i--n nanostructure are demonstrated and discussed. Cerenkov generation of optical phonons by drifting electrons in GaAs-based p--i--n nanostructure is reported. Finally, some future challenging experiments related to these novel transient carrier transport phenomena are addressed.

Keywords

68 

Keywords

68 

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Authors and Affiliations

  • Kong-Thon Tsen
    • 1
  1. 1.Department of Physics and Astronomy, Arizona State University , Tempe, AZ 85287, USA

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