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Electron Transport in Ferromagnet/InAs Hybrid Devices

  • Guido Meier
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 43)

Abstract

Electron transport in ferromagnet/InAs hybrid metal-oxide semiconductor field-effect transistors is investigated at liquid helium temperature. We employ p-type InAs crystals which exhibit two-dimensional electron systems at their surfaces. In transistors with non-magnetic contacts Shubnikov-de Haas oscillations as well as weak localization effects in the longitudinal resistance hint at a strong and tunable spin-orbit interaction. Permalloy source and drain contacts with defined micromagnetic behavior have been integrated in ferromagnet/InAs hybrid transistors. These transistors exhibit a tunable magnetoresistance effect which is examined in external magnetic fields as a function of the gate voltage.

Keywords

Gate Voltage Spin Polarization Weak Localization Hybrid Device Haas Oscillation 
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Authors and Affiliations

  • Guido Meier
    • 1
  1. 1.Institut für Angewandte Physik und Zentrum für MikrostrukturforschungUniversität HamburgHamburg

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