Cellular Monte Carlo Modeling of AlxIn1−xSb/InSb Quantum Well Transistors
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In this work, an Indium Antimonide (InSb) quantum well transistor is investigated using full-band Monte Carlo simulations. The steady-state characteristic of the device is first analyzed, showing particle transport along the two-dimensional electron gas (2DEG). The small-signal behavior of the device is also investigated. Finally, the noise analysis is performed, allowing for a two-dimensional mapping of the noise within the device.
KeywordsPower Spectral Density Noise Analysis Negative Differential Resistance Drain Voltage Electron Drift Velocity
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