Cellular Monte Carlo Modeling of AlxIn1−xSb/InSb Quantum Well Transistors

Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 110)


In this work, an Indium Antimonide (InSb) quantum well transistor is investigated using full-band Monte Carlo simulations. The steady-state characteristic of the device is first analyzed, showing particle transport along the two-dimensional electron gas (2DEG). The small-signal behavior of the device is also investigated. Finally, the noise analysis is performed, allowing for a two-dimensional mapping of the noise within the device.


Power Spectral Density Noise Analysis Negative Differential Resistance Drain Voltage Electron Drift Velocity 
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Copyright information

© Springer-Berlag Berlin Heidelberg 2006

Authors and Affiliations

  1. 1.ECE Dept.Illinois Institute of TechnologyChicagoUSA
  2. 2.EE Dept.Arizona State UniversityTempeUSA
  3. 3.ECE Dept.Worcester Polytechnic InstituteWorcesterUSA

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