Abstract
In this paper, electron emission from non-planar potential barrier structures is analyzed using a Monte Carlo electron transport model. Compared to the planar structures, about twice bigger emission current can be achieved for the non-planar tall barriers. The thermionic emission enhancement is attributed to combined effects of increased effective interface area and reduced probability of total internal reflection at the heterostructure interface.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A. Shakouri and J. Bowers, Appl. Phys. Lett. 71, 1234 (1997).
G. D. Mahan and L. M. Woods, Phys. Rev. Lett. 80, 4016 (1998).
M. D. Ulrich, P. A. Barnes, and C. B. Vining, J. Appl. Phys. 90, 1625 (2001).
D. Vashaee and A. Shakouri, Phys. Rev. Lett. 92, 106106 (2004).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer-Berlag Berlin Heidelberg
About this paper
Cite this paper
Bian, Z., Shakouri, A. (2006). Monte Carlo Simulation of Solid-State Thermionic Energy Conversion Devices Based on Non-Planar Heterostructure Interfaces. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_40
Download citation
DOI: https://doi.org/10.1007/978-3-540-36588-4_40
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)