Prediction of Entanglement Detection by I-V Characteristics

Zibold, T.; Vogl, P.; Bertoni, A.

doi:10.1007/978-3-540-36588-4_4

T. Zibold³,
P. Vogl³ &
A. Bertoni⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

We present a theoretical analysis of a ballistic GaAs/AlGaAs quantum device that allows the straightforward control and detection of the entanglement between an open, stationary double quantum wire system and a singly occupied electrostatically defined double quantum dot. The read-out involves the measurement of only the DC I-V characteristics.

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Authors and Affiliations

Walter Schottky Institute, Technische Universität München, 85748, Garching, Germany
T. Zibold & P. Vogl
National Research Center on “nanoStructures and bioSystems at Surfaces” (S3), INFM-CNR, 41100, Modena, Italy
A. Bertoni

Authors

T. Zibold
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P. Vogl
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A. Bertoni
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Editors and Affiliations

Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA
M. Saraniti
Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA
U. Ravaioli

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Zibold, T., Vogl, P., Bertoni, A. (2006). Prediction of Entanglement Detection by I-V Characteristics. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_4

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DOI: https://doi.org/10.1007/978-3-540-36588-4_4
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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