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Monte Carlo Investigation of Dynamic Transport in Nitrides

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Book cover Nonequilibrium Carrier Dynamics in Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

It is shown that in nitrides the instabilities based on the transit-time resonance inside the optical-phonon sphere of momentum space as well as the intervalley transfer of electrons can be realized in the TeraHertz frequency region. In both cases the maximum frequency of the instability is proportional to the effective rate of polar optical phonon emission.

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Author information

Authors and Affiliations

  1. Dipartimento di Ingegneria dell’ Innovazione, CNR-INFM National Nanotechnology Laboratory, Università di Lecce, Via Arnesano s/n, 73100, Lecce, Italy

    L. Reggiani

  2. Semiconductor Physics Institute, A. Gostauto 11, LT 01108, Vilnius, Lithuania

    P. Shiktorov, E. Starikov & V. Gruzinskis

  3. CEM2 - Centre d’Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507), Universite Montpellier II, 34095, Montpellier Cedex 5, France

    L. Varani, J. C. Vaissiere & J. P. Nougier

Authors
  1. L. Reggiani
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  2. P. Shiktorov
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  3. E. Starikov
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  4. V. Gruzinskis
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  5. L. Varani
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  6. J. C. Vaissiere
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  7. J. P. Nougier
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Editor information

Editors and Affiliations

  1. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA

    M. Saraniti

  2. Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA

    U. Ravaioli

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© 2006 Springer-Berlag Berlin Heidelberg

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Reggiani, L. et al. (2006). Monte Carlo Investigation of Dynamic Transport in Nitrides. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_32

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